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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1869
DESCRIPTION *With TO-220F package *Complement to type 2SC4935 APPLICATIONS *Power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -50 -50 -5 -3 -0.3 10 150 -55~150
UNIT V V V A A W
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ; IB=0
B
2SA1869
MIN -50
TYP.
MAX
UNIT V
IC=-2A ;IB=-0.2A
B
-0.3 -0.8
-0.6 -1.0 -1.0 -1.0
V V A A
IC=-0.5A ; VCE=-2V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 70 30
240
35 100
pF MHz
hFE-1 Classifications O 70-140 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1869
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1869
4

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